Haffouz, S: search on Z-Library

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1

Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy

Fernando González-Posada, Jennifer A. Bardwell, Simona Moisa, Soufien Haffouz, Haipeng Tang, Alejandro F. Braña, Elías Muñoz

Journal:

Applied Surface Science

Year:

2007

Language:

english

File:

PDF, 232 KB

english, 2007

2

Wet etching for improved GaN-based HBT performance

Jennifer A. Bardwell, Soufien Haffouz, Eugene M. Hsu, Haipeng Tang, Peter Chyurlia, James B. Webb

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 189 KB

english, 2005

3

GaN-Based Solar-Ultraviolet Detection Instrument

Monroy, Eva, Calle, Fernando, Angulo, Carlos, Vila, Pablo, Sanz, Angel, Garrido, Jose Antonio, Calleja, Enrique, Mũoz, Elias, Haffouz, Soufien, Beaumont, Bernard

Journal:

Year:

1998

Language:

english

File:

PDF, 225 KB

english, 1998

4

The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy

Haffouz, S., Lahrèche, H., Vennéguès, P., de Mierry, P., Beaumont, B., Omnès, F., Gibart, P.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 1.00 MB

english, 1998

5

Terahertz quantum well infrared detectors

Marcel Graf, Emmanuel Dupont, Hui Luo, Soufien Haffouz, Zbig R. Wasilewski, Anthony J. Spring Thorpe, Dayan Ban, H.C. Liu

Journal:

Infrared Physics & Technology

Year:

2009

Language:

english

File:

PDF, 696 KB

english, 2009

6

Bright Single InAsP Quantum Dots at Telecom Wavelengths in Position-Controlled InP Nanowires: The Role of the Photonic Waveguide

Haffouz, Sofiane, Zeuner, Katharina D., Dalacu, Dan, Poole, Philip J., Lapointe, Jean, Poitras, Daniel, Mnaymneh, Khaled, Wu, Xiaohua, Couillard, Martin, Korkusinski, Marek, Schöll, Eva, Jöns, Klaus D

Journal:

Year:

2018

Language:

english

File:

PDF, 652 KB

english, 2018

7

High Quality GaN Layers on Si(111) Substrates: AlN Buffer Layer Optimisation and Insertion of a SiN Intermediate Layer

P.R. Hageman, S. Haffouz, V. Kirilyuk, A. Grzegorczyk, P.K. Larsen

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 91 KB

english, 2001

8

Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates

Beaumont, B, Gibart, P, Vaille, M, Haffouz, S, Nataf, G, Bouillé, A

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 194 KB

english, 1998

9

Near-Infrared Ultrawide Bandwidth LEDs Using InAs Quantum Dots of Equally Tuned Heights

Haffouz, Sofiane, Barrios, Pedro J., Poitras, Daniel, Normandin, Richard

Journal:

IEEE Photonics Technology Letters

Year:

2012

Language:

english

File:

PDF, 588 KB

english, 2012

10

Sub-bandgap optical absorption of MOVPE-GaN grown under controlled nucleation.

P de Mierry, H Lahreche, S Haffouz, P Vennéguès, B Beaumont, F Omnès, P Gibart

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 892 KB

english, 1999

11

Growth of GaN epilayers on Si(111) substrates using multiple buffer layers

Hageman, P.R., Haffouz, S., Grzegorczk, A., Kirilyuk, V., Larsen, P.K.

Journal:

MRS Proceedings

Year:

2001

Language:

english

File:

PDF, 708 KB

english, 2001

12

Monitoring the self-heating in a high frequency GaN HFET

S.P. McAlister, J.A. Bardwell, S. Haffouz, H. Tang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 143 KB

english, 2006

13

SPIE Proceedings [SPIE Asia Pacific Optical Communications - Hangzhou, China (Sunday 26 October 2008)] Optoelectronic Materials and Devices III - Multiwavelength quantum-dot semiconductor fiber ring laser

Lu, Z.G., Luo, Yi, Buus, Jens, Liu, J.R., Zhang, X.P., Koyama, Fumio, Lo, Yu-Hwa, Raymond, S., Poole, P.J., Barrios, P.J., Poitras, D., Haffouz, S., Wasilewski, Z., Pakulski, G.

Year:

2008

Language:

english

File:

PDF, 213 KB

english, 2008

14

Single quantum dot-in-a-rod embedded in a photonic nanowire waveguide for telecom band emission

Haffouz, S., Poole, P. J., Jin, J., Wu, X., Ginet, L., Mnaymneh, K., Dalacu, D., Williams, R. L.

Journal:

Applied Physics Letters

Year:

2020

File:

PDF, 1.78 MB

2020

15

Si (111) substrates as highly effective pseudomasks for selective growth of GaN material and devices by ammonia-molecular-beam epitaxy

Tang, H., Haffouz, S., Bardwell, J. A.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 510 KB

english, 2006

16

Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

McAlister, S. P., Bardwell, J. A., Haffouz, S., Tang, H.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2006

Language:

english

File:

PDF, 393 KB

english, 2006

17

Near-Room-Temperature Mid-Infrared Quantum Well Photodetector

Sean Hinds, Margaret Buchanan, Richard Dudek, Sofiane Haffouz, Sylvain Laframboise, Zbigniew Wasilewski, H. C. Liu

Journal:

Advanced Materials

Year:

2011

Language:

english

File:

PDF, 1.37 MB

english, 2011

18

Low pressure MOVPE grown AlGaN for UV photodetector applications

F. Omnes, N. Marenco, S. Haffouz, H. Lahreche, P. de Mierry, B. Beaumont, P. Hageman, E. Monroy, F. Calle, E. Muñoz

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 198 KB

english, 1999

19

Strong potential profile fluctuations and effective localization process in InGaN∕GaN multiple quantum wells grown on {10-1m} faceted surface GaN template

Haffouz, S., Tang, H., Bardwell, J. A., Lefebvre, P., Bretagnon, T., Riemann, T., Christen, J.

Journal:

Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 556 KB

english, 2006

20

Comparative Study Of Gan Movpe Growth Processes Using Two Different “Surface Preparation-Carrier Gas” Combinations

Vennegues, P., Haffouz, S., Bouille, A., Leroux, M., Beaumont, B.

Journal:

MRS Proceedings

Year:

1998

Language:

english

File:

PDF, 1.70 MB

english, 1998

21

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - The Effect of Surface Cleaning on Current Collapse in AlGaN/GaN HEMTs

Bardwell, J., Haffouz, Soufien, McKinnon, Ross, Storey, Craig, Tang, Haipeng, Sproule, G. Irwin, Roth, Daniel, Wang, Rongzhu

Year:

2006

Language:

english

File:

PDF, 461 KB

english, 2006

22

The Effect of Surface Cleaning on Current Collapse in AlGaN∕GaN HEMTs

Bardwell, J. A., Haffouz, S., McKinnon, W. R., Storey, C., Tang, H., Sproule, G. I., Roth, D., Wang, R.

Journal:

Electrochemical and Solid-State Letters

Year:

2007

Language:

english

File:

PDF, 277 KB

english, 2007

23

Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire

M Leroux, B Beaumont, N Grandjean, P Lorenzini, S Haffouz, P Vennéguès, J Massies, P Gibart

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 274 KB

english, 1997

24

Violet GaN based light emitting diodes fabricated by metal organics vapour phase epitaxy

B Beaumont, S Haffouz, P Gibart, M Leroux, Ph Lorenzini, E Calleja, E Muñoz

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 190 KB

english, 1997

25

Electrical Characterization and Surface Morphology of Optimized Ti∕Al∕Ti∕Au Ohmic Contacts for AlGaN∕GaN HEMTs

Bardwell, J. A., Haffouz, S., Tang, H., Wang, R.

Journal:

Journal of The Electrochemical Society

Year:

2006

Language:

english

File:

PDF, 399 KB

english, 2006

26

Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si (111) substrates

Macht, L., Hageman, P. R., Haffouz, S., Larsen, P. K.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 580 KB

english, 2005

27

Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy

Beaumont, B., Haffouz, S., Gibart, P.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 449 KB

english, 1998

28

AlGaN/GaN HFETs fabricated from maskless selectively grown mesas on Si(111) substrates

Bardwell, J.A., Haffouz, S., Kochtane, A., Lester, T., Storey, C., Tang, H.

Journal:

Electronics Letters

Year:

2007

Language:

english

File:

PDF, 111 KB

english, 2007

29

p-doping of GaN by MOVPE

Haffouz, S., Beaumont, B., Leroux, M., Laugt, M., Lorenzini, P., Gibart, Pierre, Hubert-Pfalzgraf, L.G.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

1997

File:

PDF, 205 KB

1997

30

The GaN Growth by a Hot Filament Metalorganic Vapor Phase Deposition Technique

T. Boufaden, A. Rebey, I. Halidou, Z. Chine, S. Haffouz, B. El Jani

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 142 KB

english, 1999

31

SPIE Proceedings [SPIE Asia-Pacific Optical Communications - Wuhan, China (Thursday 1 November 2007)] Optoelectronic Materials and Devices II - Quantum-dot semiconductor waveguide devices

Lu, Z. G., Liu, J. R., Raymond, S., Poole, P. J., Barrios, P. J., Haffouz, S., Poitras, D., Pakulski, G., Taebi, S., Song, Y., Zhang, X. P., Hall, T.

Year:

2013

Language:

english

File:

PDF, 238 KB

english, 2013

32

Influence of selective GaN islands on optical properties of GaN films grown on sapphire substrate

S Haffouz, P.R Hageman, V Kirilyuk, L Macht, J.L Weyher, P.K Larsen

Journal:

Materials Science and Engineering: B

Year:

2003

Language:

english

File:

PDF, 468 KB

english, 2003

33

[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - Monitoring the Self-Heating in a High Frequency GaN HFET

McAlister, S.P., Bardwell, J.A., Haffouz, S., Tang, H.

Year:

2005

Language:

english

File:

PDF, 222 KB

english, 2005

34

Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height

S. Haffouz, P. J. Barrios, R. Normandin, D. Poitras, Z. Lu

Year:

2012

Language:

english

File:

PDF, 294 KB

english, 2012

35

Theory and experiments of coherent photon coupling in semiconductor nanowire waveguides with quantum dot molecules

Carlson, Chelsea, Dalacu, Dan, Gustin, Chris, Haffouz, Sofiane, Wu, Xiaohua, Lapointe, Jean, Williams, Robin L., Poole, Philip J., Hughes, Stephen

Journal:

Physical Review B

Year:

2019

Language:

english

File:

PDF, 3.62 MB

english, 2019

36

AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy

S. Haffouz, H. Tang, J.A. Bardwell, E.M. Hsu, J.B. Webb, S. Rolfe

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 308 KB

english, 2005

37

Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy

G Nataf, B Beaumont, A Bouillé, S Haffouz, M Vaille, P Gibart

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 308 KB

english, 1998

38

High quality ELO-GaN layers on GaN/Al2O3 patterned substrates by halide vapour phase epitaxy

G. Nataf, B. Beaumont, A. Bouillé, P. Vennéguès, S. Haffouz, M. Vaille, P. Gibart

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 1.79 MB

english, 1999

39

Blue-U.V. Homojunction GaN LEDs Fabricated by MOVPE

Beaumont, B., Calle, F., Haffouz, S., Monroy, E., Leroux, Mathieu, Calleja, Enrique, Lorenzini, P., Muñoz Merino, Elias, Gibart, Pierre

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 344 KB

1998

40

Ammonia molecular beam epitaxy growth of p-type GaN and application to bipolar junction transistors

S. Haffouz, H. Tang, J. A. Bardwell, S. Rolfe, E. M. Hsu, I. Sproule, S. Moisa, M. Beaulieu, J. B. Webb

Year:

2005

Language:

english

File:

PDF, 596 KB

english, 2005

41

In-situ tuning of individual position-controlled nanowire quantum dots via laser-induced intermixing

Fiset-Cyr, Alexis, Dalacu, Dan, Haffouz, Sofiane, Poole, Philip J., Lapointe, Jean, Aers, Geof C., Williams, Robin L.

Journal:

Applied Physics Letters

Year:

2018

Language:

english

File:

PDF, 1.53 MB

english, 2018

42

p-doping of GaN by MOVPE

Haffouz, S., Beaumont, B., Leroux, M., Laugt, M., Lorenzini, P., Gibart, Pierre, Hubert-Pfalzgraf, L.G.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

1997

Language:

english

File:

PDF, 205 KB

english, 1997

43

Optimization of Si/N Treatment Time of Sapphire Surface and Its Effect on the MOVPE GaN Overlayers

S. Haffouz, B. Beaumont, P. Vennéguès, P. Gibart

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 247 KB

english, 1999

44

Uniformity of AlGaN∕GaN HEMTs Grown by Ammonia-MBE on 2-in. Sapphire Substrate

Hsu, E. M., Bardwell, J. A., Haffouz, S., Tang, H., Storey, C., Chyurlia, P.

Journal:

Journal of The Electrochemical Society

Year:

2005

Language:

english

File:

PDF, 96 KB

english, 2005

45

factor in GaAs quantum dots and quantum wells of different well widths

Allison, G., Fujita, T., Morimoto, K., Teraoka, S., Larsson, M., Kiyama, H., Oiwa, A., Haffouz, S., Austing, D. G., Ludwig, A., Wieck, A. D., Tarucha, S.

Journal:

Physical Review B

Year:

2014

Language:

english

File:

PDF, 3.31 MB

english, 2014

46

Selectively grown AlGaN/GaN HEMTs on Si(1 1 1) substrates for integration with silicon microelectronics

S. Haffouz, F. Semond, J.A. Bardwell, T. Lester, H. Tang

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 437 KB

english, 2009

47

Growth of crack-free, carbon-doped GaN and AlGaN∕GaN high electron mobility transistor structures on Si (111) substrates by ammonia molecular beam epitaxy

Haffouz, S., Tang, H., Rolfe, S., Bardwell, J. A.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 432 KB

english, 2006

48

Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy

Haffouz, S., Beaumont, B., Gibart, Pierre

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

1998

Language:

english

File:

PDF, 721 KB

english, 1998

49

Multiplexed Single-Photon Source Based on Multiple Quantum Dots Embedded within a Single Nanowire

LaferriÃ¨re, Patrick, Yeung, Edith, Giner, Lambert, Haffouz, Sofiane, Lapointe, Jean, Aers, Geof C., Poole, Philip J., Williams, Robin L., Dalacu, Dan

Journal:

Year:

2020

File:

PDF, 1001 KB

2020

50

[ECS 212th ECS Meeting - Washington, DC (October 7 - October 12, 2007)] ECS Transactions - AlGaN/GaN HEMTs Fabricated on Selectively Grown Mesas on Si(111)

Bardwell, J., Haffouz, Soufien, Tang, Haipeng, Kochtane, Amine, Lester, Tim, Wang, Rongzhu, Rolfe, Stephen

Year:

2007

Language:

english

File:

PDF, 541 KB

english, 2007

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